Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Hongyi Dou, Markus Hellenbrand, Ming Xiao, Zedong Hu, Sundar Kunwar, Aiping Chen, Judith L. MacManus-Driscoll, Quanxi Jia, and Haiyan Wang
Adv. Electron. Mater. 2023, 2201186
DOI: 10.1002/aelm.202201186
Protons: Critical Species for Resistive Switching in Interface-Type Memristors
Sundar Kunwar, Chase Bennett Somodi, Rebecca A. Lalk, Bethany X. Rutherford, Zachary Corey, Pinku Roy, Di Zhang, Markus Hellenbrand, Ming Xiao, Judith L. MacManus-Driscoll, Quanxi Jia, Haiyan Wang, J. Joshua Yang, Wanyi Nie, and Aiping Chen
Adv. Electron. Mater. 2023, 9, 2200816
DOI: 10.1002/aelm.202200816
Optical dielectric properties of HfO2-based films
Hongyi Dou, Nives Strkalj, Yizhi Zhang, Judith L. MacManus-Driscoll, Quanxi Jia, and Haiyan Wang
Journal of Vacuum Science & Technology A 40, 033412 (2022)
DOI: 10.1116/6.0001651
Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Hongyi Dou, Xingyao Gao, Di Zhang, Samyaj Dhole, Zhimin Qi, Bo Yang, Md Nazmul Hasan, Jung-Hun Seo, Quanxi Jia, Markus Hellenbrand, Judith L. MacManus-Driscoll, Xhinhang Zhang, and Haiyan Wang
ACS Appl. Electron. Mater. 2021, 3, 12, 5278–5286
DOI: 10.1021/acsaelm.1c00791
High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3
Chao Yun, Matthew Webb, Weiwei Li, Rui Wu, Ming Xiao, Markus Hellenbrand, Ahmed Kursumovic, Hongyi Dou, Xingyao Gao, Samyak Dhole, Di Zhang, Aiping Chen, Jueli Shi, Kelvin H. L. Zhang, Haiyan Wang, Quanxi Jia, and Judith L. MacManus-Driscoll
J. Mater. Chem. C, 2021, 9, 4522-4531
DOI: 10.1039/D1TC00202C
Tailoring physical functionalities of complex oxides by vertically aligned nanocomposite thin-film design
Jijie Huang, Weiwei Li, Hao Yang, and Judith L. MacManus-Driscoll
MRS Bulletin 46 (2021): 159-167
DOI: 10.1557/s43577-021-00028-0
A pathway to desired functionalities in vertically aligned nanocomposites and related architectures
Aiping Chen & Quanxi Jia
MRS Bulletin 46 (2021): 115-122
DOI: 10.1557/s43577-021-00032-4