Research

We are a team of researchers working to nanoengineer resistive switching thin films for memory and neuromorphic computing. Our interdisciplinary team brings expertise in functional material growth, materials characterization, and device physics together to develop scalable, industry-quality resistive switching devices.

There is an urgent need for energy efficient non-volatile memory (NVM) to accommodate the world’s ever growing data creation, with data center’s expecting to consume >10% of the worlds electricity by 2023. Achieving scalable low-power NVM could allow for a more than 60% reduction in this energy consumption. Our team focuses on resistive switching memory (memristors) which are a promising candidate for achieving this goal. Further, resistive switching films may allow for the merging of memory and processing (neuromorphic computing) increasing the power and efficiency of future computing.

Our growth team develops resistive switching films using both materials development and industry-compatible growth techniques like pulsed-laser deposition, chemical vapor deposition, sputtering, and atomic layer deposition. We characterize our films using state-of-the-art electron, optical, X-ray, and probe-tip microscopy techniques, including some in-situ and in-operando characterization. Finally, we fabricate and test devices, collaborating with industry to achieve high level device performance.

Beyond our goal to better the future of our environment by contributing to the reduction of energy consumption, our team aims train a next generation of international researchers that will continue a track record of materials innovation. Further, we work to engage with the public in conversations about the future of energy technology.

Keep up to date with our progress on this site, and on our group websites. Please contact our team leaders with enquires about collaboration or questions on our work.