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US-UK Resistive Switching Team

 

Several of our members met at the EMA23 conference in Orlando, Florida, and gave various talks about materials for memory applications.

Aiping talked about magnetism in Uranium oxide thin films, and about designing memory devices for neuromorphic applications.

Hongyi stood in for Prof Wang to deliver an invited talk about multifunctional hybrid materials for various device applications.

Markus gave an invited talk about making resistive switching more uniform by confining the switching processes to certain areas of a thin film.

Nives gave an invited talk about memory applications based on Schottky-to-Ohmic interface transitions based on ferroelectric switching.

It was great meeting in person after countless online meetings!